IPD042P03L3G BTS5215LAUMA1 IC Chip Karolo e Ncha ea Elektronike

IPD042P03L3G BTS5215LAUMA1 IC Chip Setšoantšo se secha sa Elektronike se Hlahang.

tlhaloso e khuts'oane:

Re romelle lengolo-tsoibila Khoasolla Datesheet

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

IPD042P03L3 G
P-channel enhanced mode Field-Effect Transistor (FET), -30 V, D-PAK
Malapa a Infineon a iqapetsoeng haholo a Opti MOS™ a kenyelletsa matla a p-channel MOSFET.Lihlahisoa tsena li lula li kopana le litlhoko tsa boleng bo holimo le tsa ts'ebetso ho lintlha tsa bohlokoa bakeng sa moralo oa sistimi ea motlakase joalo ka ho hanyetsa boemo ba naha le palo ea litšobotsi tse ntle.

Kakaretso ea Likarolo
Mokhoa oa ho ntlafatsa
Boemo ba kelello
Avalanche e fuoe lintlha
Ho fetoha ka potlako
Dv/dt e fuoe lintlha
Pb-mahala lead-plating
RoHS e lumellana, halogen-mahala
E tšoaneleha ho latela AEC Q101
Likopo tse ka khonehang
Mesebetsi ea Tsamaiso ea Matla
Taolo ea makoloi
Chaja e ka botong
DC-DC
Moreki
Bafetoleli ba maemo a utloahalang
Matla a bakhanni ba liheke tsa MOSFET
Lisebelisoa tse ling tsa ho fetola

Litlhaloso

Sehlahisoa Tšobotsi	Boleng ba Tšobotsi
Moetsi:	Infineon
Sehlopha sa Sehlahisoa:	MOSFET
RoHS:	Lintlha
Theknoloji:	Si
Mounting Style:	SMD/SMT
Sephutheloana / Taba:	HO YA-252-3
Transistor Polarity:	P-Channel
Nomoro ea Likanale:	1 Channel
Vds – Drain-Source Breakdown Voltage:	30 V
Id - Mokelikeli o Tsoelang Pele oa Hona Joale:	70 A
Rds On - Ho hanyetsa Mohloli oa Drain-Source:	3.5 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	175 nC
Mocheso o fokolang oa ho sebetsa:	-55 C
Boholo ba Thempereichara ea Tšebetso:	+ 175 C
Pd - Phallo ea Matla:	150 W
Mokhoa oa Channel:	Ntlafatso
Lebitso la khoebo:	OptiMOS
Sephutheloana:	Reel
Sephutheloana:	Khaola Theipi
Sephutheloana:	MouseReel
Lebitso:	Infineon Technologies
Tlhophiso:	Motho a le mong
Nako ea hoetla:	22 ns
Fetela Transconductance – Min:	65 S
Bolelele:	2.3 limilimithara
Bolelele:	6.5 limilimithara
Mofuta oa Sehlahisoa:	MOSFET
Nako ea ho Phahamisa:	167 ns
Letoto:	OptiMOS P3
Bongata ba Pakete ea Feme:	2500
Sehlopha-potlana:	MOSFETs
Mofuta oa Transistor:	1 P-Channel
Nako e Tloaelehileng ea ho Lieha:	89 ns
Nako e Tloaelehileng ea ho Lata Nako:	21 ns
Bophara:	6.22 limilimithara
Karolo # Litlhaloso:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Boima ba Yuniti:	0.011640 oz